具有过流保护功能的高性能智能IGBT

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583640

Y. Shimizu, Y. Nakano, Y. Kono, N. Sakurai, Y. Sugawara, S. Otaka

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引用次数: 20

摘要

我们提出了一个600 V, 30 a的IGBT，具有新颖的过流保护电路，在一个芯片上。该保护电路被制作在涂有多晶硅薄膜的硅片上。在栅极抑制电路中使用齐纳二极管使栅极电压保持在控制值。成功地得到了无振荡的过流限制函数。该器件在100 A/cm/sup /下的导通电压为1.50 V。关断下降时间为0.28 /spl mu/s。这个权衡值几乎是这类平面栅极IGBT的极限。

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A high performance intelligent IGBT with overcurrent protection

We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm/sup 2/. The turn-off fall time is 0.28 /spl mu/s. This trade-off value is almost at the limit of this class of planer-gate IGBT.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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