基于1T1R AlOx/ wox的RRAM阵列的阻性开关可变性研究

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628071

Bin Jiao, Ning Deng, Jie Yu, Yue Bai, Minghao Wu, Ye Zhang, H. Qian, Huaqiang Wu

{"title":"基于1T1R AlOx/ wox的RRAM阵列的阻性开关可变性研究","authors":"Bin Jiao, Ning Deng, Jie Yu, Yue Bai, Minghao Wu, Ye Zhang, H. Qian, Huaqiang Wu","doi":"10.1109/EDSSC.2013.6628071","DOIUrl":null,"url":null,"abstract":"Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in a commercial CMOS foundry. Yield of forming process is studied with different transistor size and forming voltage. The tradeoff between array size, speed and power consumption are discussed.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Resisitive switching variability study on 1T1R AlOx/WOx-based RRAM array\",\"authors\":\"Bin Jiao, Ning Deng, Jie Yu, Yue Bai, Minghao Wu, Ye Zhang, H. Qian, Huaqiang Wu\",\"doi\":\"10.1109/EDSSC.2013.6628071\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in a commercial CMOS foundry. Yield of forming process is studied with different transistor size and forming voltage. The tradeoff between array size, speed and power consumption are discussed.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628071\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628071","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

由于开关过程的随机性，电阻式随机存取存储器(RRAM)通常表现出较大的变化。研究了基于双层AlOx/WOx的RRAM细胞的关键参数变化。这些AlOx/WOx存储器件是在商用CMOS代工厂制造的。研究了在不同晶体管尺寸和成型电压条件下的成品率。讨论了阵列大小、速度和功耗之间的权衡。

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Resisitive switching variability study on 1T1R AlOx/WOx-based RRAM array

Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in a commercial CMOS foundry. Yield of forming process is studied with different transistor size and forming voltage. The tradeoff between array size, speed and power consumption are discussed.

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来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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