基于键合的通道转移和低温工艺的单片三维集成平台开发

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2016-10-01 DOI:10.1109/S3S.2016.7804407

R. Choi, Hyun‐Yong Yu, Hyungsub Kim, H. Ryu, H. Bae, K. K. Choi, Yong-Won Cha, C. Choi

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引用次数: 3

摘要

我们研究了单片3D集成平台开发的低温工艺，包括基于氢/氦离子注入的晶圆解理和键合(<;450℃)，低温(<;550℃)原位掺杂S/D选择性SiGe外延工艺，低温(<;在化学-机械抛光(CMP)晶圆片上进行200°C的栅极叠加，并进行绿激光退火。这些单元技术可用于实现高性能、低功耗应用的3D集成平台技术。

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Bonding based channel transfer and low temperature process for monolithic 3D integration platform development

We have studied low temperature processes for monolithic 3D integration platform development including hydrogen/helium ion implantation-based wafer cleavage & bonding (<; 450°C), low temperature (<; 550°C) in-situ doped S/D selective SiGe epi process, low temperature (<; 200°C) gate stack on the chemical-mechanical polished (CMP) wafer, and green-lased annealing. These unit technologies can be adopted to achieve 3D integration platform technology for the high performance and low power applications.

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来源期刊

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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