{"title":"在~106cm−2的Si衬底上外延生长GaAs/AlGaAs激光器的设计优化","authors":"Yugeng Shi, Bing Wang, Siyuan Yu","doi":"10.1109/CSTIC52283.2021.9461434","DOIUrl":null,"url":null,"abstract":"We have studied the total number effect of TDs in laser cavities with different sizes by using the rate equations in theory and simulation. Our initial results show that by decreasing the laser cavity size, the threshold current densities can be reduced and other performance such as slope efficiency and nonradiative recombination can be improved. This method may provide another design space for lasers epitaxially grown on Si.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design Optimization of GaAs/AlGaAs Lasers Epitaxially Grown on Si Substrates with Threading Dislocation Density in the Range of ~106cm−2\",\"authors\":\"Yugeng Shi, Bing Wang, Siyuan Yu\",\"doi\":\"10.1109/CSTIC52283.2021.9461434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the total number effect of TDs in laser cavities with different sizes by using the rate equations in theory and simulation. Our initial results show that by decreasing the laser cavity size, the threshold current densities can be reduced and other performance such as slope efficiency and nonradiative recombination can be improved. This method may provide another design space for lasers epitaxially grown on Si.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design Optimization of GaAs/AlGaAs Lasers Epitaxially Grown on Si Substrates with Threading Dislocation Density in the Range of ~106cm−2
We have studied the total number effect of TDs in laser cavities with different sizes by using the rate equations in theory and simulation. Our initial results show that by decreasing the laser cavity size, the threshold current densities can be reduced and other performance such as slope efficiency and nonradiative recombination can be improved. This method may provide another design space for lasers epitaxially grown on Si.
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