10 nm节点接触电阻率的硒偏析优化

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839658

C. Ni, K. V. Rao, F. Khaja, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, C. Chang, A. Mayur, N. Variam, R. Hung, A. Brand

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引用次数: 1

摘要

研究了不同整合方案下Se+植入物对n-SD(源/漏)接触电阻率(ρC)的降低。结果表明，通过将Se+峰放置在靠近硅化物(TiSi2或NiPtSi)/Si界面的位置，可以最小化植入物的损伤，从而实现Se+植入物能量是提高ρC的最关键工艺参数之一。通过毫秒激光退火，可以恢复硅化物和n-SD区域的植入物损伤，同时最大限度地减少掺杂剂的失活。本工作为实现10 nm节点n-SD低ρC解决方案提供了可行的集成途径。

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Selenium segregation optimization for 10 nm node contact resistivity

Contact resistivity (ρ_C) reduction for n-SD (source/drain) with Se⁺ implant was evaluated for different integration schemes. It is found that Se⁺ implant energy is one of the most critical process parameters for ρ_C improvement, achieved by placing the Se⁺ peak close to silicide (TiSi₂ or NiPtSi)/Si interface and minimized implant damage. Recovery of implant damage to silicide and n-SD region was achieved with millisecond laser anneal, while minimizing dopant deactivation. This work demonstrated a viable integration pathway to realize low ρ_C solution for n-SD for 10 nm node.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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