多层金属化工艺导致氧化物可靠性降低

K. Noguchi, T. Horiuchi
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引用次数: 0

摘要

研究了多层金属化工艺对氧化物可靠性的影响。除了众所周知的等离子体刻蚀引起的充电损伤外,还发现了其他类型的损伤。它们是由ILD过程引起的非电损伤和由等离子体氧化物沉积引起的充电损伤。并观察了等离子体诱导充电损伤的恢复效应。由于损伤对测量的响应取决于应力偏置条件,因此选择适当的应力条件对于识别损伤的性质非常重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reduced oxide reliability due to multilevel metalization process
The effect of multilevel metalization process on oxide reliability was investigated. In addition to the well-known charging damage from plasma etching, other types of damages were identified. They are non-electrical damage due to ILD process, and charging damage due to plasma oxide deposition. Recovery effects of plasma induced charging damage were also observed. Since the damage responds differently to measurement depending on the stress bias condition, an appropriate choice of stress condition is important to identify the nature of the damage.
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