BiCMOS自热对SOI技术的影响

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356558

E. Haralson, B. Malm, T. Johansson, M. Ostling

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引用次数: 7

摘要

在0.25 /spl mu/m的BiCMOS技术中，采用不同的隔离结构进行自加热。提取并报告了单发射极和多发射极器件的热阻值。在确定器件的隔离方案时，热阻对发射极宽高比的依赖性是必须考虑的。进行了二维电热模拟，并与实验结果进行了比较。通过模拟研究了金属化对器件自热的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of self heating in a BiCMOS on SOI technology

Self heating in a 0.25 /spl mu/m BiCMOS technology, with different isolation structures, is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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