{"title":"利用瞬态光致电压检测异质结构聚酰亚胺LB薄膜中的电子转移","authors":"Xiaobin Xu, T. Kubota, M. Iwamoto","doi":"10.1109/ISEIM.1995.496523","DOIUrl":null,"url":null,"abstract":"We developed a transient photoinduced voltage measuring system and investigated the photoinduced electron transfer in hetero-structured polyimide (PI) LB films. The photoinduced transient voltage depended on PORPI layers (n), indicating that there are two kinds of electron transfer mechanism. For n>3, the maximum value of the induced transient voltage increased as n increased. We estimated that they were transported in PORPI films at a distance of 2-4 nm.","PeriodicalId":130178,"journal":{"name":"Proceedings of 1995 International Symposium on Electrical Insulating Materials","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Detection of the electron transfer in hetero-structured polyimide LB films by transient photoinduced voltage\",\"authors\":\"Xiaobin Xu, T. Kubota, M. Iwamoto\",\"doi\":\"10.1109/ISEIM.1995.496523\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed a transient photoinduced voltage measuring system and investigated the photoinduced electron transfer in hetero-structured polyimide (PI) LB films. The photoinduced transient voltage depended on PORPI layers (n), indicating that there are two kinds of electron transfer mechanism. For n>3, the maximum value of the induced transient voltage increased as n increased. We estimated that they were transported in PORPI films at a distance of 2-4 nm.\",\"PeriodicalId\":130178,\"journal\":{\"name\":\"Proceedings of 1995 International Symposium on Electrical Insulating Materials\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 International Symposium on Electrical Insulating Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEIM.1995.496523\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 International Symposium on Electrical Insulating Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEIM.1995.496523","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detection of the electron transfer in hetero-structured polyimide LB films by transient photoinduced voltage
We developed a transient photoinduced voltage measuring system and investigated the photoinduced electron transfer in hetero-structured polyimide (PI) LB films. The photoinduced transient voltage depended on PORPI layers (n), indicating that there are two kinds of electron transfer mechanism. For n>3, the maximum value of the induced transient voltage increased as n increased. We estimated that they were transported in PORPI films at a distance of 2-4 nm.
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