基于MgO的自兼容ReRAM器件的开关特性

2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS) Pub Date : 2015-10-01 DOI:10.1109/MWSCAS.2015.7282090

Wenchao Lu, Wenbo Chen, Prem Thapaliya, Ryan O' Dell, R. Jha

{"title":"基于MgO的自兼容ReRAM器件的开关特性","authors":"Wenchao Lu, Wenbo Chen, Prem Thapaliya, Ryan O' Dell, R. Jha","doi":"10.1109/MWSCAS.2015.7282090","DOIUrl":null,"url":null,"abstract":"We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices compared to Ti/MgO devices. The mechanism behind this observation was explained based on oxygen ions and oxygen vacancies transport between TiOx and MgO layers.","PeriodicalId":216613,"journal":{"name":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Switching characteristics of MgO based self-compliant ReRAM devices\",\"authors\":\"Wenchao Lu, Wenbo Chen, Prem Thapaliya, Ryan O' Dell, R. Jha\",\"doi\":\"10.1109/MWSCAS.2015.7282090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices compared to Ti/MgO devices. The mechanism behind this observation was explained based on oxygen ions and oxygen vacancies transport between TiOx and MgO layers.\",\"PeriodicalId\":216613,\"journal\":{\"name\":\"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2015.7282090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2015.7282090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们报道了钛(Ti)和TiOx界面层对MgO基阻性随机存取存储器(ReRAM)器件开关特性的影响。具有Ti/MgO和Ti/TiOx/MgO双层结构的器件具有双极电阻开关特性，具有自适应行为和低设置/复位电压。与Ti/MgO器件相比，Ti/TiOx/MgO器件的自顺应电流要低得多。这一现象背后的机制是基于氧离子和氧空位在TiOx和MgO层之间的传输。

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Switching characteristics of MgO based self-compliant ReRAM devices

We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices compared to Ti/MgO devices. The mechanism behind this observation was explained based on oxygen ions and oxygen vacancies transport between TiOx and MgO layers.

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来源期刊

2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)

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