高应变低带隙IV族半导体的生长与界面工程

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874645

S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca

{"title":"高应变低带隙IV族半导体的生长与界面工程","authors":"S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca","doi":"10.1109/ISTDM.2014.6874645","DOIUrl":null,"url":null,"abstract":"Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth and interface engineering of highly strained low bandgap group IV semiconductors\",\"authors\":\"S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca\",\"doi\":\"10.1109/ISTDM.2014.6874645\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874645\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在GeSn应变松弛缓冲层上外延生长出高拉伸应变的Ge(Sn)层。电学表征表明，在锗和应变锗上使用HfO2的高k栅极堆具有良好的界面质量。这些结果标志着向低带隙高张力IV族半导体电子器件集成迈出了第一步。

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Growth and interface engineering of highly strained low bandgap group IV semiconductors

Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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