G. Gulyamov, B.B. Shakhobiddinov, G. Majidova, F.R. Mukhiddinova
{"title":"超高频场对p-n导电半导体二极管光电特性的影响","authors":"G. Gulyamov, B.B. Shakhobiddinov, G. Majidova, F.R. Mukhiddinova","doi":"10.37681/2181-1652-019-x-2021-2-5","DOIUrl":null,"url":null,"abstract":"In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES\",\"authors\":\"G. Gulyamov, B.B. Shakhobiddinov, G. Majidova, F.R. Mukhiddinova\",\"doi\":\"10.37681/2181-1652-019-x-2021-2-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-2-5\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-2-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES
In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed
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