Y. Liu, H. Tanaka, N. Umeyama, K. Koga, S. Khumpuang, M. Nagao, T. Matsukawa, S. Hara
{"title":"超薄圆膜片上完全耗尽SOI mosfet的制备与表征","authors":"Y. Liu, H. Tanaka, N. Umeyama, K. Koga, S. Khumpuang, M. Nagao, T. Matsukawa, S. Hara","doi":"10.1109/EDTM.2018.8421462","DOIUrl":null,"url":null,"abstract":"FDSOI MOSFETs and CMOS ring oscillators with different current flow directions were fabricated on ultrathin circular diaphragms using minimal-fab process, and their electrical characteristics were systematically investigated. It was found that the drain current of the <110> channel MOSFETs and the oscillation frequency of CMOS ring oscillators are changed after diaphragm formation due to residual mechanical stress. This result is very useful for the digital type pressure sensor applications.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and Characterization of Fully Depleted SOI MOSFETs on Ultrathin Circular Diaphragms Using Cost-Effective Minimal-Fab Process\",\"authors\":\"Y. Liu, H. Tanaka, N. Umeyama, K. Koga, S. Khumpuang, M. Nagao, T. Matsukawa, S. Hara\",\"doi\":\"10.1109/EDTM.2018.8421462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"FDSOI MOSFETs and CMOS ring oscillators with different current flow directions were fabricated on ultrathin circular diaphragms using minimal-fab process, and their electrical characteristics were systematically investigated. It was found that the drain current of the <110> channel MOSFETs and the oscillation frequency of CMOS ring oscillators are changed after diaphragm formation due to residual mechanical stress. This result is very useful for the digital type pressure sensor applications.\",\"PeriodicalId\":418495,\"journal\":{\"name\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM.2018.8421462\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM.2018.8421462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and Characterization of Fully Depleted SOI MOSFETs on Ultrathin Circular Diaphragms Using Cost-Effective Minimal-Fab Process
FDSOI MOSFETs and CMOS ring oscillators with different current flow directions were fabricated on ultrathin circular diaphragms using minimal-fab process, and their electrical characteristics were systematically investigated. It was found that the drain current of the <110> channel MOSFETs and the oscillation frequency of CMOS ring oscillators are changed after diaphragm formation due to residual mechanical stress. This result is very useful for the digital type pressure sensor applications.
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