肖特基二极管沟槽功率场效应管的单片集成

2006 CES/IEEE 5th International Power Electronics and Motion Control Conference Pub Date : 2006-08-01 DOI:10.1109/IPEMC.2006.4777958

Y. Gao, Jie Chen, A. Huang

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引用次数: 2

摘要

提出并分析了一种沟槽功率场效应管与肖特基二极管的单片集成。可以获得1.1 um的单元JFET电池节距。该器件的比导通电阻降至14.4 mOmegamiddotmm2，接近功率MOSFET的最新水平。对集成肖特基二极管的两种方法——结势垒肖特基二极管(JBS)和平面肖特基二极管(PSD)进行了分析和比较。集成的JBS二极管与采用相同集成技术的p-n二极管相比，正向压降和反向恢复电荷分别降低了28%和30%，集成的PSD分别降低了30%和32%

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Monolithic Integration of Trench Power JFET with Schottky Diode

A monolithic integration of trench power JFET with Schottky diode is proposed and analyzed. A unit JFET cell pitch of 1.1 um can be obtained. The specific on-resistance of the device is reduced to 14.4 mOmegamiddotmm2 which is close to state-of-art of power MOSFET. Two approaches for the integrated Schottky diode -junction barrier Schottky (JBS) and planar Schottky diode (PSD) - are analyzed and compared. The integrated JBS diode shows 28% and 30% reduction while the integrated PSD shows 30% and 32% reduction on forward voltage drop and reverse recovery charge respectively compared with its p-n counterpart from the same integration technology

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2006 CES/IEEE 5th International Power Electronics and Motion Control Conference

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