大电流MOS器件的热不稳定性:实验证据，电热模拟和分析建模

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003144

P. Spirito, G. Breglio, V. d’Alessandro, N. Rinaldi

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引用次数: 46

摘要

本文通过实验方法和数值模拟方法对大功率MOS的热不稳定性现象进行了深入的研究。导出了漏极电流正温度系数的解析表达式，并提出了暂态运行时的热不稳定性模型。结果解释了热不稳定的主要原因，并给出了一些规则来评估给定设备可能发生的故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal instabilities in high current power MOS devices: experimental evidence, electro-thermal simulations and analytical modeling

The phenomenon of the thermal instability presented by some high current power MOS has been intensively investigated, both by experimental means and by numerical simulations. An analytical expression for the positive temperature coefficient of the Drain current has been developed and a model for the thermal instability in transient operation has been proposed. The results explain the main causes of the thermal instability and give some rules to evaluate the possible failure occurrence for a given device.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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