标准CMOS工艺中250nA静态电流高PSRR基准电压

S. Strik, V. Strik
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引用次数: 0

摘要

在便携式设备中,功率效率和模拟集成电路的抗噪性是非常重要的。本文介绍了一种电压基准电路,该电路工作在极低的静态电流(低于250 nA)下,并与标准CMOS工艺兼容。它是针对便携式电子设备,汽车,医疗设备等广泛应用的最佳设计,包括高电源抑制比(PSRR)和开关噪声抗扰性非常重要的片上系统(SoC)实现。所描述的电压基准在低频时提供高达90db的电压。输出电压变化的标准偏差为0.5%,温度系数为15 ppm/°C,温度范围为-40℃至125℃。这些特性可以在1.6V到5.5V的电源电压范围内实现。介绍了各种电压基准输入抗扰度的设计方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
250nA quiescent current high PSRR voltage reference in standard CMOS process
Power efficiency is very important in portable devices as well as noise immunity of analog ICs. This article describes a voltage reference circuit that operates with extremely low quiescent current (below 250 nA) and is compatible with a standard CMOS process. It is optimally designed for a wide range of applications such as portable electronic devices, automotive, medical equipment, including system-on-chip (SoC) implementation where high-power supply rejection ratio (PSRR) and switching noise immunity are very important. The described voltage reference provides up to 90 dB at low frequencies. Standard deviation of the output voltage variation is 0.5% with a temperature coefficient of 15 ppm/°C at -40°C to 125°C temperature range. These characteristics are achievable at 1.6V to 5.5V supply voltage range. Various design approaches for input noise immunity of voltage reference are implemented.
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