可靠性挑战伴随着互连缩小和超低k介电体

R. Hoofman, J. Michelon, P. Bancken, R. Daamen, G. Verheijden, V. Arnal, O. Hinsinger, L. Gosset, A. Humbert, W. Besling, C. Goldberg, R. Fox, L. Michaelson, C. Guedj, J. Guillaumond, V. Jousseaume, L. Arnaud, D. Gravesteijn, J. Torres, G. Passemard
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引用次数: 9

摘要

互连尺寸的不断缩小以及多孔低k材料的引入极大地增加了集成挑战的数量。本文主要研究多孔低k介电材料对互连可靠性的影响。与致密的低k材料相比,它们的孔隙率引起了许多可靠性问题。这些机械性能差的材料对包装的影响是众所周知的。然而,除了机械可靠性之外,超低k材料由于其固有的孔隙度,极易受到加工(尤其是等离子体)的影响。此外,很难在多孔低k界面上沉积连续的薄屏障。与致密材料相比,多孔低k材料的劣等性能被认为会引发许多可靠性问题,这些问题除了由金属线和介电间距的不断缩小引起的问题之外。所有这些都对最终产品的可靠性产生了巨大的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics
The continuous downscaling of interconnect dimensions in combination with the introduction of porous low-k materials has increased the number of integration challenges tremendously. The paper focuses mainly on the impact of porous low-k dielectrics on interconnect reliability. Numerous reliability issues are induced by their porosity compared to dense low-k materials. The impact of these mechanically inferior materials on packaging is well known. However, on top of the mechanical reliability, ultra low-k materials are extremely vulnerable to processing (especially to plasmas), due to their inherent porosity. Additionally, it is difficult to deposit a continuous, thin barrier on porous low-k interfaces. The inferior properties of porous low-k materials as compared to their dense equivalents are thought to induce numerous reliability issues, which are in addition to the ones caused by the continuous downscaling of metal lines and dielectric spacings. All of this together has an enormous impact on the reliability of the end product.
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