一种利用测量s参数确定亚微米MOSFET沟道迁移率模型参数的新方法

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871256

Seonghearn Lee, Hyun-Kyu Yu

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引用次数: 4

摘要

提出了一种基于从s参数中提取栅极总电荷随掩膜栅极长度的斜率的新方法，直接从亚微米mosfet中确定有效的沟道迁移率模型参数。由于该方法不需要大型测试装置，不需要寄生电容校准，也不需要测量有效通道长度，因此比传统方法更简单，更准确。

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A new method to determine channel mobility model parameters in submicron MOSFET's using measured S-parameters

A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFETs. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods.

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来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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