{"title":"谐振相位晶体管级联电路","authors":"R. Wanner, P. Russer","doi":"10.1109/SMIC.2004.1398225","DOIUrl":null,"url":null,"abstract":"We propose a stable two-port amplifier concept using resonance phase transistors (RPT). While an RPT is a highly unstable device, the cascode of two RPT allows us to realize stable two-port amplifiers. The RPT cascode circuit shows an increase of the maximum stable gain G/sub MSG/ by 21 dB compared with an RPT in common emitter configuration. To minimize parasitics a very compact realization topology is given.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The resonance phase transistor cascode circuit\",\"authors\":\"R. Wanner, P. Russer\",\"doi\":\"10.1109/SMIC.2004.1398225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a stable two-port amplifier concept using resonance phase transistors (RPT). While an RPT is a highly unstable device, the cascode of two RPT allows us to realize stable two-port amplifiers. The RPT cascode circuit shows an increase of the maximum stable gain G/sub MSG/ by 21 dB compared with an RPT in common emitter configuration. To minimize parasitics a very compact realization topology is given.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We propose a stable two-port amplifier concept using resonance phase transistors (RPT). While an RPT is a highly unstable device, the cascode of two RPT allows us to realize stable two-port amplifiers. The RPT cascode circuit shows an increase of the maximum stable gain G/sub MSG/ by 21 dB compared with an RPT in common emitter configuration. To minimize parasitics a very compact realization topology is given.