铁磁p-(In,Mn)As/n-InAs异质结的电子和磁性能[自旋电子器件应用]

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367813

S. May, B. Wessels

{"title":"铁磁p-(In,Mn)As/n-InAs异质结的电子和磁性能[自旋电子器件应用]","authors":"S. May, B. Wessels","doi":"10.1109/DRC.2004.1367813","DOIUrl":null,"url":null,"abstract":"In this work, (InMn)As/InAs p-n heterojunctions have been fabricated and their electronic and magnetic properties characterized. The (In,Mn)As films, deposited by atmospheric pressure meta organic vapor phase epitaxy, are ferromagnetic at room temperature as determined by magneto-optical Kerr effect (MOKE) measurements and variable-temperature magnetic force microscopy. The J-V characteristics of these junctions were measured over the temperature range of 78 to 300 K. In addition, the magnetic field dependence of the I-V characteristics has been measured. The magnetoresistive properties of these heterojunctions suggest they may be suitable for use in spintronic devices.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]\",\"authors\":\"S. May, B. Wessels\",\"doi\":\"10.1109/DRC.2004.1367813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, (InMn)As/InAs p-n heterojunctions have been fabricated and their electronic and magnetic properties characterized. The (In,Mn)As films, deposited by atmospheric pressure meta organic vapor phase epitaxy, are ferromagnetic at room temperature as determined by magneto-optical Kerr effect (MOKE) measurements and variable-temperature magnetic force microscopy. The J-V characteristics of these junctions were measured over the temperature range of 78 to 300 K. In addition, the magnetic field dependence of the I-V characteristics has been measured. The magnetoresistive properties of these heterojunctions suggest they may be suitable for use in spintronic devices.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367813\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，制备了(InMn)As/InAs p-n异质结，并对其电子和磁性能进行了表征。经常压元有机气相外延沉积的(In,Mn)As薄膜在室温下具有铁磁性，这是通过磁光克尔效应(MOKE)测量和变温磁力显微镜确定的。在78 ~ 300 K的温度范围内测量了这些结的J-V特性。此外，还测量了其I-V特性与磁场的关系。这些异质结的磁阻特性表明它们可能适合用于自旋电子器件。

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Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]

In this work, (InMn)As/InAs p-n heterojunctions have been fabricated and their electronic and magnetic properties characterized. The (In,Mn)As films, deposited by atmospheric pressure meta organic vapor phase epitaxy, are ferromagnetic at room temperature as determined by magneto-optical Kerr effect (MOKE) measurements and variable-temperature magnetic force microscopy. The J-V characteristics of these junctions were measured over the temperature range of 78 to 300 K. In addition, the magnetic field dependence of the I-V characteristics has been measured. The magnetoresistive properties of these heterojunctions suggest they may be suitable for use in spintronic devices.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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