J. de Jong, R. Lane, B. van Schravendijk, G. Conner
{"title":"单多晶硅层先进的超高速BiCMOS技术","authors":"J. de Jong, R. Lane, B. van Schravendijk, G. Conner","doi":"10.1109/BIPOL.1989.69487","DOIUrl":null,"url":null,"abstract":"A single-polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1- mu m NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, polysilicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented. The key processing steps and the resulting device characteristics are examined with an emphasis on the manufacturability of this technology. The bipolar transistor and CMOS device reliability is discussed.<<ETX>>","PeriodicalId":189201,"journal":{"name":"Proceedings of the Bipolar Circuits and Technology Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"Single polysilicon layer advanced super high-speed BiCMOS technology\",\"authors\":\"J. de Jong, R. Lane, B. van Schravendijk, G. Conner\",\"doi\":\"10.1109/BIPOL.1989.69487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single-polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1- mu m NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, polysilicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented. The key processing steps and the resulting device characteristics are examined with an emphasis on the manufacturability of this technology. The bipolar transistor and CMOS device reliability is discussed.<<ETX>>\",\"PeriodicalId\":189201,\"journal\":{\"name\":\"Proceedings of the Bipolar Circuits and Technology Meeting\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Bipolar Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1989.69487\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Bipolar Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1989.69487","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
摘要
提出了一种单多晶硅层先进超高速(HS4+) BiCMOS技术，该技术提供1 μ m NMOS和PMOS器件，13 ghz双极npn晶体管，侧向pnps，肖特基二极管，多晶硅电阻，侧向熔断器和三层Al/Cu互连。关键加工步骤和由此产生的器件特性进行了检查，重点是该技术的可制造性。讨论了双极晶体管和CMOS器件的可靠性。
Single polysilicon layer advanced super high-speed BiCMOS technology
A single-polysilicon-layer advanced super-high-speed (HS4+) BiCMOS technology which offers 1- mu m NMOS and PMOS devices, 13-GHz bipolar npn transistors, lateral pnps, Schottky diodes, polysilicon resistors, lateral fuses, and three layers of Al/Cu interconnect is presented. The key processing steps and the resulting device characteristics are examined with an emphasis on the manufacturability of this technology. The bipolar transistor and CMOS device reliability is discussed.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
