{"title":"密度梯度方程的非线性离散化方法","authors":"M. Ancona, B. Biegel","doi":"10.1109/SISPAD.2000.871241","DOIUrl":null,"url":null,"abstract":"Density-gradient theory enables engineering-oriented analyses of electronic devices in which quantum confinement and tunneling phenomena are significant (Ancona and Tiersten, 1987; Ancona, 1990; Ancona et al, 1999). A nonlinear three-point discretization of the density-gradient equations is presented. The new method, an exponential-fitting scheme, is evaluated using numerical examples involving both quantum confinement and tunneling. The nonlinear discretization is shown to perform far better than the conventional linear version allowing for a substantial easing in the mesh refinement, especially in tunneling problems.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"224 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Nonlinear discretization scheme for the density-gradient equations\",\"authors\":\"M. Ancona, B. Biegel\",\"doi\":\"10.1109/SISPAD.2000.871241\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Density-gradient theory enables engineering-oriented analyses of electronic devices in which quantum confinement and tunneling phenomena are significant (Ancona and Tiersten, 1987; Ancona, 1990; Ancona et al, 1999). A nonlinear three-point discretization of the density-gradient equations is presented. The new method, an exponential-fitting scheme, is evaluated using numerical examples involving both quantum confinement and tunneling. The nonlinear discretization is shown to perform far better than the conventional linear version allowing for a substantial easing in the mesh refinement, especially in tunneling problems.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"224 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871241\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871241","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
摘要
密度梯度理论使面向工程的电子器件分析成为可能,其中量子约束和隧道现象是重要的(Ancona和Tiersten, 1987;安科纳,1990;Ancona et al, 1999)。提出了密度梯度方程的非线性三点离散化方法。用涉及量子约束和隧道效应的数值例子对指数拟合方法进行了评价。非线性离散化显示出比传统的线性版本执行得更好,允许在网格细化方面有实质性的缓解,特别是在隧道问题中。
Nonlinear discretization scheme for the density-gradient equations
Density-gradient theory enables engineering-oriented analyses of electronic devices in which quantum confinement and tunneling phenomena are significant (Ancona and Tiersten, 1987; Ancona, 1990; Ancona et al, 1999). A nonlinear three-point discretization of the density-gradient equations is presented. The new method, an exponential-fitting scheme, is evaluated using numerical examples involving both quantum confinement and tunneling. The nonlinear discretization is shown to perform far better than the conventional linear version allowing for a substantial easing in the mesh refinement, especially in tunneling problems.