采用体偏置技术的新型SRAM设计，适用于超低功耗应用

2010 11th International Symposium on Quality Electronic Design (ISQED) Pub Date : 2010-03-22 DOI:10.1109/ISQED.2010.5450536

F. Moradi, D. Wisland, H. Mahmoodi, Y. Berg, T. Cao

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引用次数: 20

摘要

提出了一种新的SRAM设计方案。机身偏置改善了静态噪声裕度(SNM)，与标准单元相比至少提高了15%。通过使用这种技术，降低电源电压成为可能。该SRAM单元在0.3V电源电压下工作，为读取周期提供了22%的SNM改进。由于使用体偏技术，写边距不受影响。65nm ST模型用于模拟。

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New SRAM design using body bias technique for ultra low power applications

A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.

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来源期刊

2010 11th International Symposium on Quality Electronic Design (ISQED)

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