RF NMOS switch with dedicated sinks for reduced leakage current

In this paper we introduce a method to significantly reduce the substrate leakage current in an RF NMOS switch device without degrading the device figure-of-merit (Ron×Coff), and with no increase in device complexity. This is based on modifying the structure layout, and introducing dedicated sinks. These sinks prevent the substrate's minority carriers from reaching the source/drain regions, thereby removing it from the signal path. In addition, this approach allows independent tuning of two parameters, leakage and Ron×Coff figure-of-merit.