氧环境下溅射制备氧化铟锡薄膜的光电性能研究

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2016-09-01 DOI:10.1109/ICEEE.2016.7751218

S. Vazquez, A. Olivares, I. Cosme, S. Mansurova, A. Kosarev, A. Itzmoyotl

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引用次数: 1

摘要

采用磁控溅射法制备了不同氧流量(%O2 = 1% ~ 0%)下的氧化铟锡(ITO)薄膜。采用射频放电技术，在衬底温度T = 175℃，压力P = 6 mTorrs的氩气/氧气气氛中，射频功率W = 150 W沉积薄膜。利用四点探针法和透射率测量对制备的ITO薄膜的光电参数进行了表征。结果表明，随着氧浓度的降低，膜阻减小。在氧气气氛中制备的样品透光率达到90%以上。然而，在氧气气氛中T = 300℃进行沉积后热处理的样品具有最佳的透射率(95%)和最低的片电阻值(Rs= 27欧姆平方)。最后，将透明导电氧化物应用于有机-无机杂化光伏结构。当氧浓度为%O2 = 0.25%时，ITO结构在AM-1阳光下的最佳功率转换效率η = 2.13%，而用商业ITO结构的效率η = 1.87%。

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Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere

Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O2 = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175° C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were characterized by four-point probe method and transmittance measurements. It was found that reducing oxygen concentration the sheet resistance decreases. For samples fabricated in oxygen atmosphere the transmittance reached values above 90 %. However, the sample with post-deposition thermal treatment at T = 300 °C in oxygen atmosphere shows the best transmittance (95 %) and lowest value of sheet resistance (Rs= 27 ohms-square). Finally, the transparent conducting oxides were applied in hybrid organic-inorganic photovoltaic structures. The best power conversion efficiency in AM-1 sunlight η = 2.13 % was obtained for a structure with ITO fabricated at oxygen concentration %O2 = 0.25 % in comparison with an efficiency η = 1.87 % obtained for a structure fabricated with commercial ITO.

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2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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