包括电热耦合效应的AlGaN/GaN HEMT三维建模

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI:10.1109/MMWCST.2012.6238127

Jianhui Wang, Xinhua Wang, L. Pang, Xiaojuan Chen, Xin Kong, Xinyu Liu

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引用次数: 1

摘要

AlGaN/GaN HEMT的热性能在设计阶段是一个关键问题，因为它会显著影响器件的使用寿命。本文介绍了一种包含电热耦合效应的三维建模技术，用于研究AlGaN/GaN HEMT的热特性。该方法通过二维和三维模型之间的迭代计算，实现了仿真时间和精度的良好平衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

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The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology

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