智能手机缓冲区缓存管理中修改数据的选择性刷新

Soojung Lim, H. Bahn
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引用次数: 4

摘要

缓冲缓存在隐藏智能手机存储系统缓慢的性能方面起着重要的作用。然而,由于缓冲缓存由易失性DRAM组成,数据可能在突然断电的情况下丢失。为了处理这种情况,缓冲区缓存中的数据会定期刷新到存储器中。尽管定期刷新提高了智能手机数据的可靠性,但它极大地降低了缓冲缓存的效率,因为它放大了对存储的写流量。在本文中,我们表明,通过利用智能手机的一些不同的写I/O行为,小尺寸的持久内存可以消除智能手机缓冲区缓存的周期性刷新开销。具体来说,我们对流行智能手机应用程序的写I/O分析表明,智能手机中的大多数文件写入都是由有限数量的热数据造成的,而智能手机中访问的大部分文件数据只写入一次。基于这一观察,我们提出了选择性刷新策略,该策略将小的持久内存添加到缓冲缓存中,并将频繁修改的数据保存在持久内存中,而不刷新到存储中。我们只对写入一次的数据执行存储刷新,为了提高空间效率,禁止这些数据进入持久内存。通过回放流行的智能手机应用程序的I/O轨迹,我们发现所提出的选择性刷新策略平均减少了25.8%的存储写I/O,最高减少了37.8%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Selective Flushing of Modified Data for Smartphone Buffer Cache Management
Buffer cache plays an important role to hide the slow performance of smartphone storage systems. However, as buffer cache consists of volatile DRAM, data may be lost upon a sudden power failure situation. To cope with this situation, data in the buffer cache are periodically flushed to storage. Although periodic flushing improves the reliability of smartphone data, it degrades the efficiency of buffer cache greatly as it amplifies write traffic to storage. In this paper, we show that a small size of persistent memory can eliminate the periodic flushing overhead of smartphone buffer cache by making use of some distinct write I/O behaviors of smartphones. Specifically, our write I/O analysis from popular smartphone applications shows that a limited number of hot data account for most file writes in smartphones, whereas a large portion of file data accessed in smartphones are written only once. Based on this observation, we present the selective flushing policy that adds small persistent memory to buffer cache and keeps frequently modified data in persistent memory without flushing to storage. We perform storage flushing only for written-once data, which are prohibited from entering persistent memory for space efficiency. By replaying popular smartphone application I/O traces, we show that the proposed selective flushing policy reduces the storage write I/O by 25.8% on average and up to 37.8%.
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