V. Jousseaume, M. Assous, A. Zenasni, S. Maitrejean, B. Remiat, P. Leduc, H. Trouvé, C. Le Cornec, M. Fayolle, A. Roule, F. Ciaramella, D. Bouchu, T. David, A. Roman, D. Scevola, T. Morel, D. Rébiscoul, G. Prokopowicz, M. Jackman, C. Guedj, D. Louis, M. Gallagher, G. Passemard
{"title":"采用改进的杂化材料,采用传统的BEOL工艺和后期去气孔工艺,实现了45 nm及以下节点的Cu/ULK (k=2.0)集成","authors":"V. Jousseaume, M. Assous, A. Zenasni, S. Maitrejean, B. Remiat, P. Leduc, H. Trouvé, C. Le Cornec, M. Fayolle, A. Roule, F. Ciaramella, D. Bouchu, T. David, A. Roman, D. Scevola, T. Morel, D. Rébiscoul, G. Prokopowicz, M. Jackman, C. Guedj, D. Louis, M. Gallagher, G. Passemard","doi":"10.1109/IITC.2005.1499923","DOIUrl":null,"url":null,"abstract":"Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal\",\"authors\":\"V. Jousseaume, M. Assous, A. Zenasni, S. Maitrejean, B. Remiat, P. Leduc, H. Trouvé, C. Le Cornec, M. Fayolle, A. Roule, F. Ciaramella, D. Bouchu, T. David, A. Roman, D. Scevola, T. Morel, D. Rébiscoul, G. Prokopowicz, M. Jackman, C. Guedj, D. Louis, M. Gallagher, G. Passemard\",\"doi\":\"10.1109/IITC.2005.1499923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal
Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.