采用改进的杂化材料,采用传统的BEOL工艺和后期去气孔工艺,实现了45 nm及以下节点的Cu/ULK (k=2.0)集成

V. Jousseaume, M. Assous, A. Zenasni, S. Maitrejean, B. Remiat, P. Leduc, H. Trouvé, C. Le Cornec, M. Fayolle, A. Roule, F. Ciaramella, D. Bouchu, T. David, A. Roman, D. Scevola, T. Morel, D. Rébiscoul, G. Prokopowicz, M. Jackman, C. Guedj, D. Louis, M. Gallagher, G. Passemard
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引用次数: 7

摘要

传统的Cu-ULK集成方案导致介电常数急剧增加,由于多孔材料的降解在工艺步骤。为了克服这一问题,本文研究了一种积分后去孔方法。提出了材料优化(k=2.0),允许使用传统的BEOL集成工艺,如氧基蚀刻化学,金属CVD势垒沉积和标准CMP工艺来致密低k。得到的集成k值低于2.2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cu/ULK (k=2.0) integration for 45 nm node and below using an improved hybrid material with conventional BEOL processing and a late porogen removal
Conventional Cu-ULK integration schemes lead to a drastic increase of the dielectric constant due to porous material degradation during process steps. In this paper, a post-integration porogen removal approach is studied to overcome this issue. Material optimization is presented (k=2.0) allowing the use of conventional BEOL integration processes such as oxygen-based etch chemistry, metal CVD barrier deposition and standard CMP process for dense low k. An integrated k value lower than 2.2 is obtained.
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