{"title":"用于VLSI电路的温度和电压测量单元","authors":"G. Quénot, N. Paris, B. Zavidovique","doi":"10.1109/EUASIC.1991.212842","DOIUrl":null,"url":null,"abstract":"A temperature and voltage measurement cell (TVM cell) for VLSI circuits has been developed. It requires less than 1 mm/sup 2/ of core area (for a 2 mu m CMOS technology) and only 4 I/O pins. It can be integrated into any GMOS VLSI circuit, permitting the measurement of the circuit die temperature (T) and its core power supply voltage (V) while the chip is operated normally in a system. It achieves simultaneously an accuracy better than 50 mV and 3 degrees C. Output values are averages of the parameter values during a 1 ms period.<<ETX>>","PeriodicalId":118990,"journal":{"name":"Euro ASIC '91","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"70","resultStr":"{\"title\":\"A temperature and voltage measurement cell for VLSI circuits\",\"authors\":\"G. Quénot, N. Paris, B. Zavidovique\",\"doi\":\"10.1109/EUASIC.1991.212842\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A temperature and voltage measurement cell (TVM cell) for VLSI circuits has been developed. It requires less than 1 mm/sup 2/ of core area (for a 2 mu m CMOS technology) and only 4 I/O pins. It can be integrated into any GMOS VLSI circuit, permitting the measurement of the circuit die temperature (T) and its core power supply voltage (V) while the chip is operated normally in a system. It achieves simultaneously an accuracy better than 50 mV and 3 degrees C. Output values are averages of the parameter values during a 1 ms period.<<ETX>>\",\"PeriodicalId\":118990,\"journal\":{\"name\":\"Euro ASIC '91\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"70\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Euro ASIC '91\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUASIC.1991.212842\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro ASIC '91","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUASIC.1991.212842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A temperature and voltage measurement cell for VLSI circuits
A temperature and voltage measurement cell (TVM cell) for VLSI circuits has been developed. It requires less than 1 mm/sup 2/ of core area (for a 2 mu m CMOS technology) and only 4 I/O pins. It can be integrated into any GMOS VLSI circuit, permitting the measurement of the circuit die temperature (T) and its core power supply voltage (V) while the chip is operated normally in a system. It achieves simultaneously an accuracy better than 50 mV and 3 degrees C. Output values are averages of the parameter values during a 1 ms period.<>
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