设计高功率射频放大器:一种分析方法

M. M. De Souza, M. Rasheduzzaman, S. N. Kumar
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引用次数: 4

摘要

介绍了3.5 GHz频率下射频功率放大器样机的分析方法。该方法不仅可以准确预测匹配阻抗,而且与测量相比,信号增益和PldB都很小。此外,该方法提供了一种简单而直接的途径,将器件和工艺技术与射频系统性能相关联,目前通过TCAD建模是不可行的。这项工作的动机是为了促进更高的效率,更低的原型成本,特别是在一些制造商的供应商模型仍在开发中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Designing high power RF amplifiers: An analytic approach
An analytic approach to prototype RF Power Amplifiers is demonstrated at 3.5 GHz. The approach can predict not only matching impedances to high accuracy, but also the small signal gain and PldB in comparison to measurement. Moreover, the method allows a simple and direct route to correlate device and process technology to RF system performance currently unfeasible via TCAD modelling. The work is motivated by the objective to facilitate a higher efficiency, lower cost to prototyping, particularly where vendor models from some manufacturers are still under development.
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