体偏置降低纳米级mosfet中BTI随时间变化的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6531958

J. Franco, B. Kaczer, M. Toledano-Luque, P. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P. Wagner, T. Grasser

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引用次数: 24

摘要

我们研究了不同体偏置下单个带电栅极氧化物缺陷对纳米级pmosfet特性的影响。当施加前向体偏置时，可以观察到时间零变异性和时间相关变异性的减小。为了解释这些观察结果，提出了一个基于通道耗尽区内未屏蔽掺杂原子数量调制的模型。

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Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias

We study the impact of individual charged gate oxide defects on the characteristics of nanoscaled pMOSFETs for varying body biases. Both a reduced time-zero variability and a reduced time-dependent variability are observed when a forward body bias is applied. In order to explain these observations, a model based on the modulation of the number of unscreened dopant atoms within the channel depletion region is proposed.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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