深亚微米集成电路互连设计

J. Cong, D. Pan, Lei He, Cheng-Kok Koh, Kei-Yong Khoo
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引用次数: 199

摘要

在深亚微米设计中,互连已成为决定电路性能和可靠性的主要因素。在本嵌入式教程中,我们首先讨论互连设计的趋势和挑战,因为技术特征尺寸迅速减小到0.1微米以下。然后,我们提出了常用的互连模型和一套互连设计和优化技术,以提高互连性能和可靠性。最后,我们从效率和优化结果方面比较了不同的优化技术,并展示了这些优化技术对每一代技术的互连性能的影响,从国家半导体技术路线图中预测的0.35 /spl mu/m到0.07 /spl mu/m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interconnect design for deep submicron ICs
Interconnect has become the dominating factor in determining circuit performance and reliability in deep submicron designs. In this embedded tutorial, we first discuss the trends and challenges of interconnect design as the technology feature size rapidly decreases towards below 0.1 micron. Then, we present commonly used interconnect models and a set of interconnect design and optimization techniques for improving interconnect performance and reliability. Finally, we present comparisons of different optimization techniques in terms of their efficiency and optimization results, and show the impact of these optimization techniques on interconnect performance in each technology generation from the 0.35 /spl mu/m to 0.07 /spl mu/m projected in the National Technology Roadmap for Semiconductors.
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