{"title":"用水平集方法模拟聚焦离子束加工的三维过程","authors":"O. Ertl, L. Filipovic, S. Selberherr","doi":"10.1109/SISPAD.2010.5604573","DOIUrl":null,"url":null,"abstract":"Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Three-dimensional simulation of focused ion beam processing using the level set method\",\"authors\":\"O. Ertl, L. Filipovic, S. Selberherr\",\"doi\":\"10.1109/SISPAD.2010.5604573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604573\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three-dimensional simulation of focused ion beam processing using the level set method
Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.