气相孔填料用于有机硅酸盐玻璃介质材料的保护

2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI:10.1109/ISSM.2018.8651158

M. Fujikawa, J. de Marneffe, R. Chanson, K. Gavan, A. Rezvanov, F. Lazzarino, Z. Tokei, T. Yamaguchi, S. Nozawa, N. Sato

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引用次数: 1

摘要

等离子体对多孔低k介质的损伤是降低高密度CMOS晶体管互连RC延迟的关键问题。本文提出了一种在等离子体过程中保护多孔有机硅酸盐玻璃(OSG)上孔隙的新方法——气相孔隙填充(GPPS)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Gas Phase Pore Stuffing for the protection of organo-silicate glass dielectric materials

Plasma induced damage on porous low-k dielectrics is a critical issue for lowering the interconnect RC delay in densely packed CMOS transistors. In this paper, we propose a new approach to protect the pores on porous organo-silicate glasses (OSG) during plasma process, so-called Gas Phase Pore Stuffing (GPPS).

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2018 International Symposium on Semiconductor Manufacturing (ISSM)

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