IC-Package交互

2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2013-04-14 DOI:10.1109/EUROSIME.2013.6529992

B. Vandevelde, A. Ivankovic, B. Debecker, M. Lofrano, K. Vanstreels, W. Guo, V. Cherman, M. Gonzalez, G. van der Plas, I. De Wolf, E. Beyne, Z. Tokei

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引用次数: 0

摘要

芯片封装交互(CPI)在过去几年中变得非常重要。原因是双重的。首先，先进的节点IC技术要求BEOL(后端线)中的介电体具有递减的k值。这些所谓的(超)低k材料具有降低的刚度和粘附强度的屏障材料，使BEOL更容易受到外部施加的应力，由于包装。其次，先进的封装技术，如3D堆叠IC使用薄晶片(低至25μm)，这可能会在晶体管水平上产生更高的应力，导致迁移率变化。

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IC-Package Interaction

Chip Package Interaction (CPI) gained a lot of importance in the last years. The reason is twofold. First, advanced node IC technologies requires dielectrics in the BEOL (back-end-of-line) with a decreasing k value. These so-called (ultra) low-k materials have a reduced stiffness and adhesion strength to the barrier materials, making the BEOL much more vulnerable to externally applied stress due to packaging. Secondly, advanced packaging technologies such as 3D stacked IC's use thinned dies (down to 25μm) which can cause much higher stresses at transistor level, resulting in mobility shifts.

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2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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