Cu(InGa)Se/sub 2/薄膜太阳能电池化学浴镀ZnS缓冲层的研究

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190644

B. Sang, W. Shafarman, R. Birkmire

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引用次数: 3

摘要

以ZnSO/ sub4 /、硫脲和氨水为原料，进行了化学浴沉积ZnS的研究。研究了ZnS薄膜的结构和光学性能。ZnS缓冲材料制备的Cu(InGa)Se/sub 2/太阳能电池在短波长的量子效率较高，而V/sub oc/和FF的量子效率略低于cd缓冲材料。ZnS缓冲液的最佳电池(总面积:0.47 cm/sup 2/)效率为13.9% (V/sub oc/: 618 mV, J/sub sc/: 32.4 mA/cm/sup 2/ FF: 0.693)。

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Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se/sub 2/ thin film solar cells

Chemical bath deposition of ZnS from solutions of ZnSO/sub 4/, thiourea and ammonia was carried out. Structural and optical properties of the ZnS films were studied. Cu(InGa)Se/sub 2/ solar cells fabricated with the ZnS buffer had higher quantum efficiency at short wavelengths but V/sub oc/, and FF were a little lower than those with CdS buffer. The best cell (total area: 0.47 cm/sup 2/) with the ZnS buffer was 13.9% efficient (V/sub oc/: 618 mV, J/sub sc/: 32.4 mA/cm/sup 2/ FF: 0.693).

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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