倒装芯片与热塑性导电胶连接

M. Gaynes, R. Kodnani, M. Pierson, P. Hoontrakul, M. Paquette
{"title":"倒装芯片与热塑性导电胶连接","authors":"M. Gaynes, R. Kodnani, M. Pierson, P. Hoontrakul, M. Paquette","doi":"10.1109/ADHES.1998.742034","DOIUrl":null,"url":null,"abstract":"A set of processes has been developed and demonstrated to interconnect flip chips with an electrically conductive adhesive material to laminates. Paste deposition uses a photolithography process to define room temperature stable thermoplastic conductive adhesive bumps that are 0.2 mm in diameter and 0.1 mm high. Photobumping is done at wafer level, and dicing yields chips that are ready for attachment to a carrier. Chip bonding process development defined a process window and identified an optimal process point. Repeatable tensile bond strengths between 10 and 14 MPa can be achieved. Fracture mode typically occurs near an interface but in the joint material. Bonding temperature, pressure, and pressure on cool-down (to 120/spl deg/C) were identified as key process variables. The optimum bonding process point is applying one MPa to the chip, while heating to 235/spl deg/C. Pressure is maintained for 30 seconds at temperature and until cooled to 70/spl deg/C. These optimum bond parameters resulted in bond lines of 0.05/spl plusmn/0.005 mm. The harshest stress test is deep thermal cycling for both blanket and stitched chip designs. The interconnect performance on the blanket chip is comparable to soldered flip chip on laminate. The interconnect performance on the stitch chip is less robust. It is believed that reaction between the photobumping stripper and the polyimide passivation results in a weak interface between the adhesive bump and card metallurgy. Results from stress testing demonstrate the design feasibility of electrically conductive adhesive interconnects for flip chip attach to laminates.","PeriodicalId":183195,"journal":{"name":"Proceedings of 3rd International Conference on Adhesive Joining and Coating Technology in Electronics Manufacturing 1998 (Cat. No.98EX180)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Flip chip attach with thermoplastic electrically conductive adhesive\",\"authors\":\"M. Gaynes, R. Kodnani, M. Pierson, P. Hoontrakul, M. Paquette\",\"doi\":\"10.1109/ADHES.1998.742034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A set of processes has been developed and demonstrated to interconnect flip chips with an electrically conductive adhesive material to laminates. Paste deposition uses a photolithography process to define room temperature stable thermoplastic conductive adhesive bumps that are 0.2 mm in diameter and 0.1 mm high. Photobumping is done at wafer level, and dicing yields chips that are ready for attachment to a carrier. Chip bonding process development defined a process window and identified an optimal process point. Repeatable tensile bond strengths between 10 and 14 MPa can be achieved. Fracture mode typically occurs near an interface but in the joint material. Bonding temperature, pressure, and pressure on cool-down (to 120/spl deg/C) were identified as key process variables. The optimum bonding process point is applying one MPa to the chip, while heating to 235/spl deg/C. Pressure is maintained for 30 seconds at temperature and until cooled to 70/spl deg/C. These optimum bond parameters resulted in bond lines of 0.05/spl plusmn/0.005 mm. The harshest stress test is deep thermal cycling for both blanket and stitched chip designs. The interconnect performance on the blanket chip is comparable to soldered flip chip on laminate. The interconnect performance on the stitch chip is less robust. It is believed that reaction between the photobumping stripper and the polyimide passivation results in a weak interface between the adhesive bump and card metallurgy. Results from stress testing demonstrate the design feasibility of electrically conductive adhesive interconnects for flip chip attach to laminates.\",\"PeriodicalId\":183195,\"journal\":{\"name\":\"Proceedings of 3rd International Conference on Adhesive Joining and Coating Technology in Electronics Manufacturing 1998 (Cat. No.98EX180)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 3rd International Conference on Adhesive Joining and Coating Technology in Electronics Manufacturing 1998 (Cat. No.98EX180)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ADHES.1998.742034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 3rd International Conference on Adhesive Joining and Coating Technology in Electronics Manufacturing 1998 (Cat. No.98EX180)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ADHES.1998.742034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

已经开发并演示了一套将倒装芯片与导电粘合材料连接到层压板的工艺。膏体沉积使用光刻工艺来定义室温稳定的热塑性导电胶疙瘩,直径为0.2 mm,高0.1 mm。光碰撞是在晶圆级完成的,切割产生的芯片可以附着在载体上。芯片键合工艺开发定义了工艺窗口,确定了最佳工艺点。可实现10 ~ 14mpa的可重复拉伸粘结强度。断裂模式通常发生在界面附近,但在接头材料中。键合温度、压力和冷却压力(至120/spl℃)被确定为关键的工艺变量。最佳粘接工艺点为对芯片施加1 MPa,加热至235℃。压力在温度下保持30秒,直到冷却到70/spl°C。这些最佳结合参数使结合线为0.05/spl plusmn/0.005 mm。最严酷的压力测试是毯子和缝片设计的深度热循环。毯片上的互连性能可与层板上的焊接倒装芯片相媲美。在针片上的互连性能较差。认为光碰撞剥离剂与聚酰亚胺钝化剂之间的反应导致了粘结碰撞与卡片冶金之间的弱界面。应力测试的结果证明了用于倒装芯片贴合层板的导电胶粘剂互连设计的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flip chip attach with thermoplastic electrically conductive adhesive
A set of processes has been developed and demonstrated to interconnect flip chips with an electrically conductive adhesive material to laminates. Paste deposition uses a photolithography process to define room temperature stable thermoplastic conductive adhesive bumps that are 0.2 mm in diameter and 0.1 mm high. Photobumping is done at wafer level, and dicing yields chips that are ready for attachment to a carrier. Chip bonding process development defined a process window and identified an optimal process point. Repeatable tensile bond strengths between 10 and 14 MPa can be achieved. Fracture mode typically occurs near an interface but in the joint material. Bonding temperature, pressure, and pressure on cool-down (to 120/spl deg/C) were identified as key process variables. The optimum bonding process point is applying one MPa to the chip, while heating to 235/spl deg/C. Pressure is maintained for 30 seconds at temperature and until cooled to 70/spl deg/C. These optimum bond parameters resulted in bond lines of 0.05/spl plusmn/0.005 mm. The harshest stress test is deep thermal cycling for both blanket and stitched chip designs. The interconnect performance on the blanket chip is comparable to soldered flip chip on laminate. The interconnect performance on the stitch chip is less robust. It is believed that reaction between the photobumping stripper and the polyimide passivation results in a weak interface between the adhesive bump and card metallurgy. Results from stress testing demonstrate the design feasibility of electrically conductive adhesive interconnects for flip chip attach to laminates.
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