A. Shafura, N. D. Md Sin, N. Azhar, I. Saurdi, M. H. Mamat, Uzer M, M. Rusop
{"title":"溶胶-凝胶浸渍法制备锡掺杂氧化锌薄膜的电导率特性","authors":"A. Shafura, N. D. Md Sin, N. Azhar, I. Saurdi, M. H. Mamat, Uzer M, M. Rusop","doi":"10.1109/ISTMET.2014.6936483","DOIUrl":null,"url":null,"abstract":"Tin-doped Zinc Oxide (Sn-doped ZnO) thin film has been deposited onto glass substrates using sol-gel immersion method. These thin films are grown at different doping concentrations. The electrical and structural characterizations of the undoped and doped films were carried out using current-voltage (IV) measurement and field emission scanning electron microscopy (FESEM). From this study, it is known that, electrical properties were influenced by varying the doping concentration. Conductivity of thin films was found to increase as the doping concentrations increased. Also indicates in this paper the surface morphology of the thin film.","PeriodicalId":364834,"journal":{"name":"2014 International Symposium on Technology Management and Emerging Technologies","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical conductivity characteristics of tin-doped Zinc Oxide thin film deposited using sol-gel immersion method\",\"authors\":\"A. Shafura, N. D. Md Sin, N. Azhar, I. Saurdi, M. H. Mamat, Uzer M, M. Rusop\",\"doi\":\"10.1109/ISTMET.2014.6936483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tin-doped Zinc Oxide (Sn-doped ZnO) thin film has been deposited onto glass substrates using sol-gel immersion method. These thin films are grown at different doping concentrations. The electrical and structural characterizations of the undoped and doped films were carried out using current-voltage (IV) measurement and field emission scanning electron microscopy (FESEM). From this study, it is known that, electrical properties were influenced by varying the doping concentration. Conductivity of thin films was found to increase as the doping concentrations increased. Also indicates in this paper the surface morphology of the thin film.\",\"PeriodicalId\":364834,\"journal\":{\"name\":\"2014 International Symposium on Technology Management and Emerging Technologies\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Symposium on Technology Management and Emerging Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTMET.2014.6936483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Symposium on Technology Management and Emerging Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTMET.2014.6936483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical conductivity characteristics of tin-doped Zinc Oxide thin film deposited using sol-gel immersion method
Tin-doped Zinc Oxide (Sn-doped ZnO) thin film has been deposited onto glass substrates using sol-gel immersion method. These thin films are grown at different doping concentrations. The electrical and structural characterizations of the undoped and doped films were carried out using current-voltage (IV) measurement and field emission scanning electron microscopy (FESEM). From this study, it is known that, electrical properties were influenced by varying the doping concentration. Conductivity of thin films was found to increase as the doping concentrations increased. Also indicates in this paper the surface morphology of the thin film.