{"title":"新一代功率半导体器件","authors":"G. Amaratunga, F. Udea","doi":"10.1109/SMICND.1996.557421","DOIUrl":null,"url":null,"abstract":"The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 6 kV) applications. Such devices will be based on utilising the advantages brought about by trench gate MOSFETs to control bipolar current flow. The semiconductor phenomena which can be accessed to optimise power device performance through use of trench gate MOS channels are discussed. Device structures which use PIN diode and thyristor type carrier distributions to reduce power loss within the device are presented. The next generation of power switching devices is proposed as being based on trench gate devices which have hybrid PIN diode and dynamic thyristor structures.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The new generation of power semiconductor devices\",\"authors\":\"G. Amaratunga, F. Udea\",\"doi\":\"10.1109/SMICND.1996.557421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 6 kV) applications. Such devices will be based on utilising the advantages brought about by trench gate MOSFETs to control bipolar current flow. The semiconductor phenomena which can be accessed to optimise power device performance through use of trench gate MOS channels are discussed. Device structures which use PIN diode and thyristor type carrier distributions to reduce power loss within the device are presented. The next generation of power switching devices is proposed as being based on trench gate devices which have hybrid PIN diode and dynamic thyristor structures.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 6 kV) applications. Such devices will be based on utilising the advantages brought about by trench gate MOSFETs to control bipolar current flow. The semiconductor phenomena which can be accessed to optimise power device performance through use of trench gate MOS channels are discussed. Device structures which use PIN diode and thyristor type carrier distributions to reduce power loss within the device are presented. The next generation of power switching devices is proposed as being based on trench gate devices which have hybrid PIN diode and dynamic thyristor structures.
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