N. Yoshida, Keping Han, P. Hsu, Matthew Beach, Xinliang Lu, R. Hung, D. Mao, Hao Chen, Wei Tang, Y. Lei, Jing Zhou, A. Noori, M. Jin, Kun Xu, A. Phatak, Shiyu Sun, S. Hassan, S. Gandikota, Chorng-Ping Chang, A. Brand
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Threshold voltage tuning by metal gate work function modulation for 10 nm CMOS integration and beyond
This paper describes a novel scheme of metal gate integration to achieve precise threshold voltage (VTH) control and multiple VTH, by using metal composition and ion implantation (I/I) into work function metal (WFM). Moreover, WFM full fill is demonstrated with in situ barrier metal to satisfy the conductance requirement of sub-10 nm node gate.
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