硅片背面清洁以减少缺陷和光刻热点;DI:缺陷检查和减少

Elango Balu, W. Tseng, David Jayez, J. Mody, K. Donegan
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引用次数: 6

摘要

随着每一个新的先进技术节点的出现,最小特征尺寸不断缩小。结果,器件变得更密集,曝光工具的聚焦深度减少,使光刻成为工艺流程中最关键的模块之一。因此,通过清洗晶圆背面来消除基于光学模拟的有问题的图案区域引发的热点是一个需要解决的关键问题,以防止显着的良率下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer backside cleaning for defect reduction and litho hot spots mitigation: DI: Defect inspection and reduction
With each new advanced technology node, minimum feature sizes continue to shrink. As a result, the devices become denser and exposure tool's depth of focus decreases — making lithography one of the most crucial modules in the process flow. Hence, the elimination of hot spots triggered by problematic pattern regions based on optical simulation, by cleaning wafer backside is a critical issue that needs to be addressed to prevent significant yield degradation.
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