薄Ta/sub 2/O/sub 5/薄膜的应力诱发泄漏电流

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003368

M. Pecovska-Gjorgjevich, N. Novkovski, E. Atanassova

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引用次数: 1

摘要

研究了不同注入电流水平下，Ta/sub 2/O/sub 5/薄膜在短时间(6 s)和长时间(2720 s)恒流应力作用下的应力诱发泄漏电流。泄漏电流随充注量的增加而增大和减小，即U-t曲线是在第一阶段、第二阶段还是第三阶段。对其导电机理进行了研究，得出了新结构的电导率服从Poole-Frenkel机制，而应力结构的电导率服从修正的Poole-Frenkel机制。

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Stress-induced leakage currents in thin Ta/sub 2/O/sub 5/ films

Stress-induced leakage currents in thin Ta/sub 2/O/sub 5/ films were investigated after short term (6 s) and long term (2720 s) constant current stress at both gate polarities for different levels of injected current. Leakage currents were increasing and decreasing depending of the amount of injected charge, i.e. whether the U-t curve was at first, second or third stage of evaluation. The conduction mechanism was also investigated and the conclusion is that conductivity obeys Poole-Frenkel mechanism for fresh structures and modified Poole-Frenkel for stressed ones.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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