{"title":"柠檬酸凝胶法制备LiNbO3薄膜及表征","authors":"B. Sivakumar, S. Gokul Rai, G. Ramesh Kumar","doi":"10.1109/ICDCSYST.2014.6926186","DOIUrl":null,"url":null,"abstract":"LiNbO3 thin films with well-developed grains were fabricated by spin-coating on SiO2(111) substrates. Annealing in static air and oxygen atmosphere was performed at 400° C 500° C 600° C for 3 h. The films obtained were characterized by thin film XRD, scanning electron microscopy and elemental analysis. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization, morphology and properties of LiNbO3 thin films is discussed.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and characterization of LiNbO3 thin films by the aqueous citric gel method\",\"authors\":\"B. Sivakumar, S. Gokul Rai, G. Ramesh Kumar\",\"doi\":\"10.1109/ICDCSYST.2014.6926186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"LiNbO3 thin films with well-developed grains were fabricated by spin-coating on SiO2(111) substrates. Annealing in static air and oxygen atmosphere was performed at 400° C 500° C 600° C for 3 h. The films obtained were characterized by thin film XRD, scanning electron microscopy and elemental analysis. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization, morphology and properties of LiNbO3 thin films is discussed.\",\"PeriodicalId\":252016,\"journal\":{\"name\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2014.6926186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation and characterization of LiNbO3 thin films by the aqueous citric gel method
LiNbO3 thin films with well-developed grains were fabricated by spin-coating on SiO2(111) substrates. Annealing in static air and oxygen atmosphere was performed at 400° C 500° C 600° C for 3 h. The films obtained were characterized by thin film XRD, scanning electron microscopy and elemental analysis. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization, morphology and properties of LiNbO3 thin films is discussed.