{"title":"场电荷提取(FCE)二极管是一种新型的软恢复高压二极管","authors":"A. Kopta, Munaf T. A. Rahimo","doi":"10.1109/ISPSD.2005.1487956","DOIUrl":null,"url":null,"abstract":"In this paper we present for the first time a newly developed high voltage diode technology, exhibiting soft recovery performance under all operating conditions. The new diode structure is capable of providing the necessary charge for soft recovery behavior by employing the field charge extraction (FCE) technology. Experimental results obtained from initial prototype samples demonstrate a clear breakthrough in soft recovery performance especially for high voltage diodes rated up to 6500V.","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"63","resultStr":"{\"title\":\"The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes\",\"authors\":\"A. Kopta, Munaf T. A. Rahimo\",\"doi\":\"10.1109/ISPSD.2005.1487956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present for the first time a newly developed high voltage diode technology, exhibiting soft recovery performance under all operating conditions. The new diode structure is capable of providing the necessary charge for soft recovery behavior by employing the field charge extraction (FCE) technology. Experimental results obtained from initial prototype samples demonstrate a clear breakthrough in soft recovery performance especially for high voltage diodes rated up to 6500V.\",\"PeriodicalId\":154808,\"journal\":{\"name\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"63\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2005.1487956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1487956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
In this paper we present for the first time a newly developed high voltage diode technology, exhibiting soft recovery performance under all operating conditions. The new diode structure is capable of providing the necessary charge for soft recovery behavior by employing the field charge extraction (FCE) technology. Experimental results obtained from initial prototype samples demonstrate a clear breakthrough in soft recovery performance especially for high voltage diodes rated up to 6500V.