一种具有两级电荷转移像素的0.61 e噪声全局快门CMOS图像传感器

2017 Symposium on VLSI Circuits Pub Date : 2017-06-01 DOI:10.23919/VLSIC.2017.8008497

K. Yasutomi, M. Seo, M. Kamoto, N. Teranishi, S. Kawahito

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引用次数: 4

摘要

提出了一种具有两级电荷转移(2-CT)结构的低噪声全局快门(GS) CMOS图像传感器。采用柱平行折叠集成(FI)/循环adc证明了所提出像素的低噪声宽动态范围性能。采用0.11 μm CIS技术实现了5.6μm间距1200 × 900像素的GS图像传感器。测量到的噪声和动态范围分别为0.61 e - rms和81 dB。

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A 0.61 e-noise global shutter CMOS image sensor with two-stage charge transfer pixels

A low-noise global shutter (GS) CMOS image sensor (CIS) with two-stage charge transfer (2-CT) structure is presented. The low-noise wide dynamic range performance of the proposed pixel has been demonstrated by using column-parallel folding integration (FI)/cyclic ADCs. The GS image sensor with 5.6μm-pitch 1200 × 900 pixels is implemented with a 0.11 μm CIS technology. The noise and dynamic range are measured to be 0.61 e−rms and 81 dB, respectively.

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2017 Symposium on VLSI Circuits

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