低温富臭氧潮湿气体环境下tft氧化硅的形成

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356552

P. N. Hai, S. Nishio, S. Horita

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引用次数: 0

摘要

在H/sub - 2/O或H/sub - 2/O/ O/sub - 2/中鼓泡(O/sub - 3/+O/sub - 2/)气体形成的富臭氧湿润环境，在250/spl℃下促进了硅衬底上氧化硅的生长。薄膜厚度可控，生长速率可达1.4 /spl //min。XPS数据表明，Si(111)表面的氧化层具有与热SiO/sub 2/膜相同的过渡层结构。结合高温短时处理(低于500/spl℃)，改善了SiO/ sub2 /薄膜的电特性。该氧化膜在多晶硅薄膜晶体管上的运行表明，该生长方法适用于低温器件的制造。

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Silicon oxide formation for TFTs using humid ozone-enriched gas ambient at low temperature

Humid ozone-enriched ambient, created by bubbling (O/sub 3/+O/sub 2/) gas in H/sub 2/O or H/sub 2/O/sub 2/, enhanced the silicon oxide growth on a Si substrate at 250/spl deg/C. The film thickness was controllable with a high growth rate of 1.4 /spl Aring//min. The XPS data shows that the oxide layer on the Si(111) has the same transition layer structure as thermal SiO/sub 2/ film. By combination with a short-time treatment at higher temperature (below 500/spl deg/C), the electrical characteristics of SiO/sub 2/ thin films were improved. The operation of polycrystalline Si thin film transistors using this oxide film indicates that the new growth method is applicable for low-temperature device fabrication.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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