Han‐Bo‐Ram Lee, W. Kim, Yongjun Park, S. Baik, Hyungjun Kim
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Cobalt and nickel atomic layer depositions for contact applications
Novel NH3-based Co thermal atomic layer deposition (T-ALD) process using Co(iPr-AMD)2 (bis(N,N'-diisopropylacetamidinato) cobalt(II)) and NH3 as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi2 was obtained. Similarly, Ni T-ALD process using NH3 as a reactant was also investigated by using Ni(dmamb)2 (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.
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