微波功率异质结双极晶体管的热分流和浴缸

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-31 DOI:10.1109/GAAS.1995.528983

C. Bozada, D. Barlage, J. Barrette, R. Dettmer, M. Mack, J. S. Sewell, Glen D. Via, L. W. Yang, D. R. Helms, J. J. Komiak

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引用次数: 4

摘要

采用热分流和浴缸热管理技术制备了异质结双极晶体管器件和电路。宽带级联码mmic在7-11 GHz的2.5-3.0瓦输出功率下具有10-14 dB增益。在12 GHz噪声功率比(NPR)为18 dBc的情况下，200 /spl mu/m/sup / 2/共发射极单元电池实现了7-8 dB的线性功率增益和40%的功率附加效率。在12 GHz的单音测量下，该单元电池实现了52%的功率附加效率，线性增益为9.5 dB，功率增益为8 dB, 5v偏置下输出功率为240 mW。

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Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub

Heterojunction bipolar transistor devices and circuits were fabricated using thermal shunt and bathtub thermal management techniques. Broadband cascode MMICs exhibited 10-14 dB gain at an output power of 2.5-3.0 Watts across 7-11 GHz. A 200 /spl mu/m/sup 2/ common-emitter unit cell achieved 7-8 dB linear power gain and 40% power-added efficiency at a noise power ratio (NPR) of 18 dBc at 12 GHz. Under single tone measurements at 12 GHz, the unit cell achieved 52% power-added efficiency, with 9.5 dB linear gain, 8 dB power gain and 240 mW output power at 5 V bias.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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