静电键合对硅膜片压力传感器特性的影响

Proceedings Third Russian-Korean International Symposium on Science and Technology. KORUS'99 (Cat. No.99EX362) Pub Date : 1999-06-22 DOI:10.1109/KORUS.1999.876249

S.V. Spoutai, A. Berdinsky, H. Chun, J. Lee

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引用次数: 0

摘要

研究了静电键合对高掺杂多晶硅压阻电阻的电阻及其温度系数的影响。电阻器安装在不同厚度的各向异性蚀刻硅薄膜表面。结果表明，电阻和电阻温度系数的变化不能仅仅由硅-玻璃界面的机械应力/应变来解释。硅-硅热氧化物界面的残余热机械应力可能是一个问题。随着膜片厚度的增加，粘接对R和TCR的影响减小。

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Effect of electrostatic bonding on the characteristics of silicon diaphragm pressure transducer

The effect of electrostatic bonding on the resistance and its temperature coefficient of the polysilicon highly doped piezoresistors is considered. The resistors are on the surface of anisotropically etched silicon diaphragms of different thickness. It is shown that changes of the resistance and temperature coefficient of the resistance cannot be accounted for solely by the mechanical stresses/strains at the silicon-glass interface. The residual thermo-mechanical stresses at the silicon-silicon thermal oxide interface are, probably, an issue. The effects of bonding on the R and TCR decreases as the thickness of diaphragm is increased.

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Proceedings Third Russian-Korean International Symposium on Science and Technology. KORUS'99 (Cat. No.99EX362)

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