用于太赫兹应用的新型HEMT结构

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553145

A. Cappy, N. Widimann, S. Bolaert, X. Wallart, W. Knap

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引用次数: 0

摘要

太赫兹辐射在从电信到生物和医学传感器等不同领域的应用中表现出极大的兴趣。本文综述了两种特别适合太赫兹应用的新型场效应器件:双栅hemt (DG-HEMT)和等离子体波晶体管

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New HEMT structures for THz applications

THz radiations present a great interest for applications in different fields ranging from telecommunications to sensors for biology and medicine. This paper reviews two new field effect devices especially suited for THz applications: double-gate HEMTs (DG-HEMT) and plasma wave transistors

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63rd Device Research Conference Digest, 2005. DRC '05.

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