J. Dilhac, L. Cornibert, B. Morillon, S. Roux, C. Ganibal
{"title":"电力集成电路快速热加工产生的深结的工业相关性","authors":"J. Dilhac, L. Cornibert, B. Morillon, S. Roux, C. Ganibal","doi":"10.1109/ISPSD.1999.764107","DOIUrl":null,"url":null,"abstract":"An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Industrial relevance of deep junctions produced by rapid thermal processing for power integrated circuits\",\"authors\":\"J. Dilhac, L. Cornibert, B. Morillon, S. Roux, C. Ganibal\",\"doi\":\"10.1109/ISPSD.1999.764107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Industrial relevance of deep junctions produced by rapid thermal processing for power integrated circuits
An alternative method for creating total vertical junction insulation for power devices is presented. It involves the thermomigration of molten Al/Si. First, the method is theoretically detailed. A full description of the equipment required for this task is then given with special emphasis on the specific characteristics needed. Physical and electrical results are briefly discussed, showing the efficiency of the method in terms of surface consumption and voltage handling capability. Finally, application of thermomigration to a manufacturing environment is considered.